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Basis Materials representative image of Bismuth Telluride (Bi2Te3) Sputtering Target

Representative image. Actual appearance may vary with composition, dimensions and manufacturing process.

BASIS MATERIALS / TARGET

Bismuth Telluride (Bi2Te3) Sputtering Target

Grade / formula: Bi2Te3

Made to Order

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Overview

Bismuth Telluride (Bi2Te3) Sputtering Target is offered for semiconductor thin-film research. Specify the target configuration and dimensions required by your deposition system.

Technical Specifications

Material Bismuth Telluride (Bi2Te3)
Formula / designation Bi2Te3
Form Sputtering Target
Deposition method (reference) RF
Bonding options Indium, Elastomer
Purity options
  • 99.999%
  • ≥99%
Size options
  • 25.4 mm Dia. x 3.175 mm Thick
  • 25.4 mm Dia. x 6.35 mm Thick
  • 50.8 mm Dia. x 3.175 mm Thick
  • 50.8 mm Dia. x 6.35 mm Thick
View all 12 options
  • 76.2 mm Dia. x 3.175 mm Thick
  • 76.2 mm Dia. x 6.35 mm Thick
  • 101.6 mm Dia. x 3.175 mm Thick
  • 101.6 mm Dia. x 6.35 mm Thick
  • 152.4 mm Dia. x 6.35 mm Thick
  • 203.2 mm Dia. x 6.35 mm Thick
  • 50.8 mm Dia x 3.175 mm Thick
  • 76.2 mm Dia x 3.175 mm Thick
CAS number 1304-82-1
Shape options Discs
Molar mass (formula reference) 800.76 g/mol
Density (reference) 7.7 g/cm³

Final specifications, available configurations, pricing, and lead time are confirmed during quotation.

Applications

  • Semiconductor thin-film research

Customization & RFQ

Requested purity, geometry, dimensions, composition where applicable, and backing / bonding configuration.

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Please request the SDS for your specific material and configuration.

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Tell us what you need

Bismuth Telluride (Bi2Te3) Sputtering Target is included automatically. Tell us the form, size and quantity you need; other details are optional.

For made-to-drawing assemblies, include the drawing number and revision in your notes and email the drawing to sales@basismaterials.com. Assembly suitability and the bonding method are reviewed for your material and equipment.