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Basis Materials representative image of Boron Carbide (B4C) Sputtering Target

Representative image. Actual appearance may vary with composition, dimensions and manufacturing process.

BASIS MATERIALS / TARGET

Boron Carbide (B4C) Sputtering Target

Grade / formula: B4C

Made to Order

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Overview

Boron carbide is a hard ceramic compound. Boron Carbide (B4C) Sputtering Target is offered for semiconductor thin-film research. Specify the target configuration and dimensions required by your deposition system.

Technical Specifications

Material Boron Carbide (B4C)
Formula / designation B4C
Form Sputtering Target
Deposition method (reference) RF
Bonding options Indium, Elastomer
Purity options
  • 99.5%
  • ≥99%
Size options
  • 25.4 mm Dia. x 3.175 mm Thick
  • 25.4 mm Dia. x 6.35 mm Thick
  • 50.8 mm Dia. x 3.175 mm Thick
  • 50.8 mm Dia. x 6.35 mm Thick
View all 14 options
  • 76.2 mm Dia. x 3.175 mm Thick
  • 76.2 mm Dia. x 6.35 mm Thick
  • 101.6 mm Dia. x 3.175 mm Thick
  • 101.6 mm Dia. x 6.35 mm Thick
  • 152.4 mm Dia. x 6.35 mm Thick
  • 203.2 mm Dia. x 6.35 mm Thick
  • 25.4 mm Dia x 3.175 mm Thick
  • 50.8 mm Dia x 3.175 mm Thick
  • 76.2 mm Dia x 3.175 mm Thick
  • 101.6 mm Dia x 3.175 mm Thick
CAS number 12069-32-8
Shape options Discs
Molar mass (formula reference) 55.251 g/mol
Density (reference) 2.52 g/cm³

Final specifications, available configurations, pricing, and lead time are confirmed during quotation.

Applications

  • Semiconductor thin-film research

Customization & RFQ

Requested purity, geometry, dimensions, composition where applicable, and backing / bonding configuration.

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Tell us what you need

Boron Carbide (B4C) Sputtering Target is included automatically. Tell us the form, size and quantity you need; other details are optional.

For made-to-drawing assemblies, include the drawing number and revision in your notes and email the drawing to sales@basismaterials.com. Assembly suitability and the bonding method are reviewed for your material and equipment.