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Basis Materials representative image of Tantalum Boride (TaB2) Sputtering Target

Representative image. Actual appearance may vary with composition, dimensions and manufacturing process.

BASIS MATERIALS / TARGET

Tantalum Boride (TaB2) Sputtering Target

Grade / formula: TaB2

Made to Order

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Overview

Tantalum Boride (TaB2) Sputtering Target is offered for semiconductor thin-film research. Specify the target configuration and dimensions required by your deposition system.

Technical Specifications

Material Tantalum Boride (TaB2)
Formula / designation TaB2
Form Sputtering Target
CAS number 12007-35-1
Purity options ≥99%
Shape options Discs
Molar mass (formula reference) 202.57 g/mol
Density (reference) 12.3 g/cm³
Melting point (reference) ≈3040°C

Final specifications, available configurations, pricing, and lead time are confirmed during quotation.

Applications

  • Semiconductor thin-film research

Customization & RFQ

Requested purity, geometry, dimensions, composition where applicable, and backing / bonding configuration.

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Please request the SDS for your specific material and configuration.

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Tell us what you need

Tantalum Boride (TaB2) Sputtering Target is included automatically. Tell us the form, size and quantity you need; other details are optional.

For made-to-drawing assemblies, include the drawing number and revision in your notes and email the drawing to sales@basismaterials.com. Assembly suitability and the bonding method are reviewed for your material and equipment.