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Basis Materials representative image of Tantalum Carbide Sputtering Target

Representative image. Actual appearance may vary with composition, dimensions and manufacturing process.

BASIS MATERIALS / TARGET

Tantalum Carbide Sputtering Target

Made to Order

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Overview

Tantalum Carbide Sputtering Target is offered for semiconductor thin-film research. Specify the target configuration and dimensions required by your deposition system.

Technical Specifications

Material Tantalum Carbide
Form Sputtering Target
Deposition method (reference)
  • RF
  • RF, DC
Bonding options Indium, Elastomer
Purity options 99.5%
Size options
  • 25.4 mm Dia. x 3.175 mm Thick
  • 25.4 mm Dia. x 6.35 mm Thick
  • 50.8 mm Dia. x 3.175 mm Thick
  • 50.8 mm Dia. x 6.35 mm Thick
View all 11 options
  • 76.2 mm Dia. x 3.175 mm Thick
  • 76.2 mm Dia. x 6.35 mm Thick
  • 101.6 mm Dia. x 3.175 mm Thick
  • 101.6 mm Dia. x 6.35 mm Thick
  • 152.4 mm Dia. x 6.35 mm Thick
  • 203.2 mm Dia. x 6.35 mm Thick
  • 76.2 mm Dia x 3.175 mm Thick
Formula option TaC
CAS number 12070-06-3
Shape options
  • Discs, Plates, Column Targets, Step Targets
  • Discs/Plates/Column/Step/Custom
Density (reference) 13.9 g/cm³
Melting point (reference) 3,880 °C

Final specifications, available configurations, pricing, and lead time are confirmed during quotation.

Applications

  • Semiconductor thin-film research
  • Protective coating development

Customization & RFQ

Requested purity, geometry, dimensions, composition where applicable, and backing / bonding configuration.

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Request a product-specific SDS

Please request the SDS for your specific material and configuration.

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Tell us what you need

Tantalum Carbide Sputtering Target is included automatically. Tell us the form, size and quantity you need; other details are optional.

For made-to-drawing assemblies, include the drawing number and revision in your notes and email the drawing to sales@basismaterials.com. Assembly suitability and the bonding method are reviewed for your material and equipment.