Representative image. Actual appearance may vary with composition, dimensions and manufacturing process.
BASIS MATERIALS / TARGET
Tantalum Silicide (TaSi2) Sputtering Target
Grade / formula: TaSi2
Made to Order
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Technical Specifications
| Material | Tantalum Silicide (TaSi2) |
|---|---|
| Formula / designation | TaSi2 |
| Form | Sputtering Target |
| Purity options | |
| Size options |
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| CAS number | 12039-79-1 |
| Shape options | Discs |
| Deposition method (reference) | RF, RF-R, DC |
| Molar mass (formula reference) | 237.12 g/mol |
| Density (reference) | 8.5 g/cm³ |
| Melting point (reference) | 2,200 °C |
Final specifications, available configurations, pricing, and lead time are confirmed during quotation.
Applications
- Semiconductor thin-film research
Customization & RFQ
Requested purity, geometry, dimensions, composition where applicable, and backing / bonding configuration.
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Tantalum Silicide (TaSi2) Sputtering Target is included automatically. Tell us the form, size and quantity you need; other details are optional.