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Basis Materials representative image of Tungsten Telluride (WTe2) Sputtering Target

Representative image. Actual appearance may vary with composition, dimensions and manufacturing process.

BASIS MATERIALS / TARGET

Tungsten Telluride (WTe2) Sputtering Target

Made to Order

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Overview

Tungsten Telluride (WTe2) Sputtering Target is offered for semiconductor thin-film research. Specify the target configuration and dimensions required by your deposition system.

Technical Specifications

Material Tungsten Telluride (WTe2)
Form Sputtering Target
CAS number 12069-76-4
Purity options ≥99%
Shape options Discs
Deposition method (reference) RF, RF-R, DC
Bonding options Indium, Elastomer
Density (reference) 9.53 g/cm³
Melting point (reference) 900°C

Final specifications, available configurations, pricing, and lead time are confirmed during quotation.

Applications

  • Semiconductor thin-film research

Customization & RFQ

Requested purity, geometry, dimensions, composition where applicable, and backing / bonding configuration.

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Request a product-specific SDS

Please request the SDS for your specific material and configuration.

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Tell us what you need

Tungsten Telluride (WTe2) Sputtering Target is included automatically. Tell us the form, size and quantity you need; other details are optional.

For made-to-drawing assemblies, include the drawing number and revision in your notes and email the drawing to sales@basismaterials.com. Assembly suitability and the bonding method are reviewed for your material and equipment.