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Basis Materials representative image of Zinc Phosphide Zn3P2 Sputtering Target

Representative image. Actual appearance may vary with composition, dimensions and manufacturing process.

BASIS MATERIALS / TARGET

Zinc Phosphide Zn3P2 Sputtering Target

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Overview

Zinc Phosphide Zn3P2 Sputtering Target is offered for semiconductor thin-film research. Specify the target configuration and dimensions required by your deposition system.

Technical Specifications

Technical specifications
Material Zinc Phosphide Zn3P2
Form Sputtering Target
Formula option Zn3P2
Density (reference) 4.55 g/cm³
Melting point (reference) 1160 °C (sublimes at 1100 °C in vacuum)

Final specifications, available configurations, pricing, and lead time are confirmed during quotation.

Applications

  • Semiconductor thin-film research
  • Photovoltaic thin films

Customization & RFQ

Requested purity, geometry, dimensions, composition where applicable, and backing / bonding configuration.

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Please request the SDS for your specific material and configuration.

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Tell us what you need

Zinc Phosphide Zn3P2 Sputtering Target is included automatically. Tell us the form, size and quantity you need; other details are optional.

For made-to-drawing assemblies, include the drawing number and revision in your notes and email the drawing to sales@basismaterials.com. Assembly suitability and the bonding method are reviewed for your material and equipment.